A Brief Review of Heavy-Ion Radiation Degradation and Failure of Silicon UMOS Power Transistors

A Brief Review of Heavy-Ion Radiation Degradation and Failure of Silicon UMOS Power Transistors

Silicon VDMOS power MOSFET technology is being supplanted by UMOS (or trench) power MOSFET technology. Designers of spaceborne power electronics systems incorporating this newer power MOSFET technology need to be aware of several unique threats that this technology may encounter in space. Space rad...

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Bibliographic Details
Main Author: Kenneth F. Galloway
Format: Article
Language:English
Published: MDPI AG 2014-09-01
Series:Electronics
Subjects:
power transistors
VDMOS
UMOS
MOSFET
radiation effects
space electronics
microdose
SEB
SEGR
Online Access:http://www.mdpi.com/2079-9292/3/4/582

Internet

http://www.mdpi.com/2079-9292/3/4/582

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