Extraction of Junction Temperature of SiC MOSFET Module Based on Turn-On dIDS/dt

In this paper, a method of extracting the junction temperature based on the turn-on current switching rate (dIDS/dt) of silicon carbide (SiC) metal-oxide semiconductor field effect transistors (MOSFETs) is proposed. The temperature dependence of dIDS/dt is analyzed theoretically, and experimentally...

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Bibliographic Details
Main Authors: Delei Huang, Guojun Tan, Chengfei Geng, Jingwei Zhang, Chang Liu
Format: Article
Language:English
Published: MDPI AG 2018-07-01
Series:Energies
Subjects:
Online Access:http://www.mdpi.com/1996-1073/11/8/1951