Formation of thermally grown SiO2/GaN interface
An attempt was made to form a thermally grown SiO2/GaN interface. A Si layer deposited on the c-plane GaN surface was oxidized in an O2 atmosphere to form a SiO2 layer. The formation of SiO2 with a bandgap of 8.6 eV was confirmed by x-ray photoelectron spectroscopy. Metal–oxide–semiconductor diodes...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0060821 |