Analog/RF Performance Investigation of Dopingless FET for Ultra-Low Power Applications

Analog/RF Performance Investigation of Dopingless FET for Ultra-Low Power Applications

In this paper, we investigated the performance of a dopingless (DL) double gate fieldeffect transistor (DL-DGFET) for ultra-low power (ULP) analog/RF applications. It is observed that the source/drain metal electrode work-function engineering in DL-DGFET yields improved analog/RF performance as comp...

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Bibliographic Details
Main Authors: Ankit Sirohi, Chitrakant Sahu, Jawar Singh
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Access
Subjects:
Charge-plasma
doping-less
transconductance
minimum noise figure
ultra low power (ULP)
Online Access:https://ieeexplore.ieee.org/document/8812733/

Internet

https://ieeexplore.ieee.org/document/8812733/

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