Modeling of NBTI degradation in p-channel VDMOSFETs
This paper gives insight in reliability of p-channel VDMOSFET power transistors subjected to NBT stressing. Effects that lead to degradation of characteristics of these electronic circuits are presented, out of which threshold voltage shift with NBT stressing is further analysed. Measurements have b...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Institut za istrazivanja i projektovanja u privredi
2020-01-01
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| Series: | Istrazivanja i projektovanja za privredu |
| Subjects: | |
| Online Access: | https://scindeks-clanci.ceon.rs/data/pdf/1451-4117/2020/1451-41172004515M.pdf |