A Flexible 0.18 <formula formulatype="inline"><tex Notation="TeX">$\mu{\rm m}$</tex> </formula> BiCMOS Technology Suitable for Various Applications

A Flexible 0.18 <formula formulatype="inline"><tex Notation="TeX">$\mu{\rm m}$</tex> </formula> BiCMOS Technology Suitable for Various Applications

Hitachi's SiGe BiCMOS technology, which integrates 0.18 &#x03BC;m CMOS and a SiGe heterojunction bipolar transistor (HBT), does not degrade MOS or bipolar performance. The BiCMOS process is divided into blocks, and the ordering of their processing is optimized so that they do not interfere...

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Bibliographic Details
Main Authors: Takashi Hashimoto, Yusuke Nonaka, Tatsuya Tominari, Tsuyoshi Fujiwara, Tsutomu Udo, Hidenori Satoh, Kunihiko Watanabe, Tomoko Jimbo, Hiromi Shimamoto, Satoru Isomura
Format: Article
Language:English
Published: IEEE 2013-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Bipolar transistor
BiCMOS
hydrogen termination
SiGe heterojunction bipolar transistor (HBT)
Online Access:https://ieeexplore.ieee.org/document/6681899/

Internet

https://ieeexplore.ieee.org/document/6681899/

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