Quantum-size effects in semiconductor heterosystems
Created on the basis of Si, GaAs and C60 fullerenes were low-dimensional heterostructures with a surface quantum-size effect at the film-substrate interface. There have been defined technological conditions of its appearance. Using modulation electroreflectance spectroscopy, calculated were spectral...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2017-07-01
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Series: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
Subjects: | |
Online Access: | http://journal-spqeo.org.ua/n2_2017/P224-230abstr.html |