Quantum-size effects in semiconductor heterosystems

Created on the basis of Si, GaAs and C60 fullerenes were low-dimensional heterostructures with a surface quantum-size effect at the film-substrate interface. There have been defined technological conditions of its appearance. Using modulation electroreflectance spectroscopy, calculated were spectral...

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Bibliographic Details
Main Authors: L.A. Matveeva, E.F. Venger, E.Yu. Kolyadina, P.L. Neluba
Format: Article
Language:English
Published: National Academy of Sciences of Ukraine. Institute of Semi conductor physics. 2017-07-01
Series:Semiconductor Physics, Quantum Electronics & Optoelectronics
Subjects:
Online Access:http://journal-spqeo.org.ua/n2_2017/P224-230abstr.html