Study on Hot Carriers Effect of Uniaxial Strained Si NMOS

The hot carrier effect of strained Si MOS is more significant than that of bulk Si MOS. Based on the study of the mechanism of hot carrier effect in uniaxial strained Si MOS, the factors affecting the hot carrier effect of uniaxial strain Si MOS and the effect on the electrical characteristics of th...

Full description

Bibliographic Details
Main Author: Wang Ying
Format: Article
Language:English
Published: AIDIC Servizi S.r.l. 2017-12-01
Series:Chemical Engineering Transactions
Online Access:https://www.cetjournal.it/index.php/cet/article/view/992