Diode Physical Parameters for HEXFETs Characterization of Dose Effect
Modeling techniques of P-N junctions have been applied for studying the physical parameters in metal-oxide semiconductor field-effect transistor structures. A parameter extraction method provides a precise description of the changes in conduction processes due to radiation damages in the integral bo...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
1998-01-01
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| Series: | Active and Passive Electronic Components |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1155/1998/26372 |
| Summary: | Modeling techniques of P-N junctions have been applied for studying the physical
parameters in metal-oxide semiconductor field-effect transistor structures. A parameter
extraction method provides a precise description of the changes in conduction processes
due to radiation damages in the integral body-drain junction. A large increase of the
ideality factor and series resistance is related to radiation-induced defects. |
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| ISSN: | 0882-7516 1563-5031 |