Analysis of the 1st and 3rd Quadrant Transients of Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

Analysis of the 1st and 3rd Quadrant Transients of Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

In this paper, performance at 1<sup>st</sup> and 3<sup>rd</sup> quadrant operation of Silicon and Silicon Carbide (SiC) symmetrical and asymmetrical double-trench, superjunction and planar power MOSFETs is analysed through a wide range of experimental measurements using compa...

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Bibliographic Details
Main Authors: Juefei Yang, Saeed Jahdi, Bernard Stark, Olayiwola Alatise, Jose Ortiz-Gonzalez, Phil Mellor
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Open Journal of Power Electronics
Subjects:
Silicon carbide
trench
double-trench
MOSFET
temperature
Online Access:https://ieeexplore.ieee.org/document/9400715/

Internet

https://ieeexplore.ieee.org/document/9400715/

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