Analysis on Tunnel Field-Effect Transistor with Asymmetric Spacer

Analysis on Tunnel Field-Effect Transistor with Asymmetric Spacer

Tunnel field-effect transistor (Tunnel FET) with asymmetric spacer is proposed to obtain high on-current and reduced inverter delay simultaneously. In order to analyze the proposed Tunnel FET, electrical characteristics are evaluated by technology computer-aided design (TCAD) simulations with calibr...

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Bibliographic Details
Main Authors: Hyun Woo Kim, Daewoong Kwon
Format: Article
Language:English
Published: MDPI AG 2020-04-01
Series:Applied Sciences
Subjects:
tunnel FET
high-κ spacer
subthreshold swing
miller capacitance
band-to-band tunneling
Online Access:https://www.mdpi.com/2076-3417/10/9/3054

Internet

https://www.mdpi.com/2076-3417/10/9/3054

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