DC Performance Variations of SOI FinFETs with Different Silicide Thickness

DC Performance Variations of SOI FinFETs with Different Silicide Thickness

DC performance and the variability of n-type silicon-on-insulator dopant-segregated FinFETs with different silicide thickness (Tsili) are analyzed. DC parameters including threshold voltage, low-field-mobility-related coefficient, and parasitic resistance are extracted from Y-function method for the...

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Bibliographic Details
Main Author:	Jun-Sik Yoon
Format:	Article
Language:	English
Published:	Hindawi Limited 2018-01-01
Series:	Advances in Condensed Matter Physics
Online Access:	http://dx.doi.org/10.1155/2018/2426863

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