DC Performance Variations of SOI FinFETs with Different Silicide Thickness
DC performance and the variability of n-type silicon-on-insulator dopant-segregated FinFETs with different silicide thickness (Tsili) are analyzed. DC parameters including threshold voltage, low-field-mobility-related coefficient, and parasitic resistance are extracted from Y-function method for the...
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| Format: | Article |
| Language: | English |
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Hindawi Limited
2018-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2018/2426863 |