Properties of Erbium and Ytterbium Doped Gallium Nitride Layers Fabricated by Magnetron Sputtering

Properties of Erbium and Ytterbium Doped Gallium Nitride Layers Fabricated by Magnetron Sputtering

We report about some properties of erbium and erbium/ytterbium doped gallium nitride (GaN) layers fabricated by magnetron sputtering on<br />silicon, quartz and Corning glass substrates. For fabricating GaN layers two types of targets were used - gallium in a stainless steel cup and<br />...

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Bibliographic Details
Main Authors: V. Prajzler, Z. Burian, I. Hüttel, J. Špirková, J. Hamáček, J. Oswald, J. Zavadil, V. Peřina
Format: Article
Language:English
Published: CTU Central Library 2006-01-01
Series:Acta Polytechnica
Subjects:
Gallium nitride
Erbium
Ytterbium
magnetron sputtering
photoluminescence
Online Access:https://ojs.cvut.cz/ojs/index.php/ap/article/view/900

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