Large Lateral Photovoltaic Effect in MoS2/GaAs Heterojunction

Large Lateral Photovoltaic Effect in MoS2/GaAs Heterojunction

Abstract Molybdenum disulfide (MoS2) nanoscaled films are deposited on GaAs substrates via magnetron sputtering technique, and MoS2/GaAs heterojunctions are fabricated. The lateral photovoltaic effect (LPE) of the fabricated MoS2/GaAs heterojunctions is investigated. The results show that a large LP...

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Bibliographic Details
Main Authors: Lanzhong Hao, Yunjie Liu, Zhide Han, Zhijie Xu, Jun Zhu
Format: Article
Language:English
Published: SpringerOpen 2017-10-01
Series:Nanoscale Research Letters
Subjects:
MoS2
GaAs
Photovoltaic
Heterojunction
Interface
Online Access:http://link.springer.com/article/10.1186/s11671-017-2334-z

Internet

http://link.springer.com/article/10.1186/s11671-017-2334-z

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