Characterization of vacancy defects in Cu(In,Ga)Se2 by positron annihilation spectroscopy
The photovoltaic performance of Cu(In1-x,Gax)Se2 (CIGS) materials is commonly assumed to be degraded by the presence of vacancy-related defects. However, experimental identification of specific vacancy defects remains challenging. In this work we report positron lifetime measurements on CIGS crystal...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4972251 |