Pade-Approximation Based Behavioral Modeling for RF Power Amplifier Design
Radio frequency (RF) power amplifier (PA) design using Gallium Nitride (GaN) transistor technology requires accurate device models in order to maximise performance and reduce development time. The current state-of-the-art frequency-domain behavioural models focus on linear and quadratic approximatio...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9328328/ |