Room-temperature near-infrared electroluminescence from boron-diffused silicon pn junction diodes
Silicon pn junction diodes with different doping concentrations were prepared by boron diffusion into Czochralski (CZ) n-type silicon substrate. Their room-temperature near-infrared electroluminescence (EL) was measured. In the EL spectra of the heavily boron doped diode, a luminescence peak at ~1.6...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Frontiers Media S.A.
2015-02-01
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| Series: | Frontiers in Materials |
| Subjects: | |
| Online Access: | http://journal.frontiersin.org/Journal/10.3389/fmats.2015.00008/full |