A sectorial scheme of gate-all-around field effect transistor with improved electrical characteristics
Reliability and controllability for a new scheme of gate-all-around field effect transistor (GAA-FET) with a silicon channel utilizing a sectorial cross section is evaluated in terms of Ion/Ioff current ratio, transconductance, subthreshold slope, threshold voltage roll-off, and drain induced barrie...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2021-03-01
|
| Series: | Ain Shams Engineering Journal |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S209044792030099X |