Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions
This paper presents the design, fabrication, and characterization of Schottky erbium/silicon photodetectors working at 1.55 µm. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier Φ<sub&g...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2018-11-01
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| Series: | Sensors |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1424-8220/18/11/3755 |