Lateral energy band profile modulation in tunnel field effect transistors based on gate structure engineering

Choosing novel materials and structures is important for enhancing the on-state current in tunnel field-effect transistors (TFETs). In this paper, we reveal that the on-state performance of TFETs is mainly determined by the energy band profile of the channel. According to this interpretation, we pre...

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Bibliographic Details
Main Authors:	Ning Cui, Renrong Liang, Jing Wang, Jun Xu
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2012-06-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.4705398

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