Lateral energy band profile modulation in tunnel field effect transistors based on gate structure engineering
Choosing novel materials and structures is important for enhancing the on-state current in tunnel field-effect transistors (TFETs). In this paper, we reveal that the on-state performance of TFETs is mainly determined by the energy band profile of the channel. According to this interpretation, we pre...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2012-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4705398 |