Lateral energy band profile modulation in tunnel field effect transistors based on gate structure engineering

Lateral energy band profile modulation in tunnel field effect transistors based on gate structure engineering

Choosing novel materials and structures is important for enhancing the on-state current in tunnel field-effect transistors (TFETs). In this paper, we reveal that the on-state performance of TFETs is mainly determined by the energy band profile of the channel. According to this interpretation, we pre...

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Main Authors: Ning Cui, Renrong Liang, Jing Wang, Jun Xu
Format: Article
Language:English
Published: AIP Publishing LLC 2012-06-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4705398
id doaj-7135a4c4f3ad430c88cde10a5abad58d
record_format Article
spelling doaj-7135a4c4f3ad430c88cde10a5abad58d2020-11-24T22:23:22ZengAIP Publishing LLCAIP Advances2158-32262012-06-0122022111022111-1610.1063/1.4705398011202ADVLateral energy band profile modulation in tunnel field effect transistors based on gate structure engineeringNing Cui0Renrong Liang1Jing Wang2Jun Xu3Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of ChinaTsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of ChinaTsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of ChinaTsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of ChinaChoosing novel materials and structures is important for enhancing the on-state current in tunnel field-effect transistors (TFETs). In this paper, we reveal that the on-state performance of TFETs is mainly determined by the energy band profile of the channel. According to this interpretation, we present a new concept of energy band profile modulation (BPM) achieved with gate structure engineering. It is believed that this approach can be used to suppress the ambipolar effect. Based on this method, a Si TFET device with a symmetrical tri-material-gate (TMG) structure is proposed. Two-dimensional numerical simulations demonstrated that the special band profile in this device can boost on-state performance, and it also suppresses the off-state current induced by the ambipolar effect. These unique advantages are maintained over a wide range of gate lengths and supply voltages. The BPM concept can serve as a guideline for improving the performance of nanoscale TFET devices.http://dx.doi.org/10.1063/1.4705398
collection DOAJ
language English
format Article
sources DOAJ
author Ning Cui
Renrong Liang
Jing Wang
Jun Xu
spellingShingle Ning Cui
Renrong Liang
Jing Wang
Jun Xu
Lateral energy band profile modulation in tunnel field effect transistors based on gate structure engineering
AIP Advances
author_facet Ning Cui
Renrong Liang
Jing Wang
Jun Xu
author_sort Ning Cui
title Lateral energy band profile modulation in tunnel field effect transistors based on gate structure engineering
title_short Lateral energy band profile modulation in tunnel field effect transistors based on gate structure engineering
title_full Lateral energy band profile modulation in tunnel field effect transistors based on gate structure engineering
title_fullStr Lateral energy band profile modulation in tunnel field effect transistors based on gate structure engineering
title_full_unstemmed Lateral energy band profile modulation in tunnel field effect transistors based on gate structure engineering
title_sort lateral energy band profile modulation in tunnel field effect transistors based on gate structure engineering
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2012-06-01
description Choosing novel materials and structures is important for enhancing the on-state current in tunnel field-effect transistors (TFETs). In this paper, we reveal that the on-state performance of TFETs is mainly determined by the energy band profile of the channel. According to this interpretation, we present a new concept of energy band profile modulation (BPM) achieved with gate structure engineering. It is believed that this approach can be used to suppress the ambipolar effect. Based on this method, a Si TFET device with a symmetrical tri-material-gate (TMG) structure is proposed. Two-dimensional numerical simulations demonstrated that the special band profile in this device can boost on-state performance, and it also suppresses the off-state current induced by the ambipolar effect. These unique advantages are maintained over a wide range of gate lengths and supply voltages. The BPM concept can serve as a guideline for improving the performance of nanoscale TFET devices.
url http://dx.doi.org/10.1063/1.4705398
work_keys_str_mv AT ningcui lateralenergybandprofilemodulationintunnelfieldeffecttransistorsbasedongatestructureengineering
AT renrongliang lateralenergybandprofilemodulationintunnelfieldeffecttransistorsbasedongatestructureengineering
AT jingwang lateralenergybandprofilemodulationintunnelfieldeffecttransistorsbasedongatestructureengineering
AT junxu lateralenergybandprofilemodulationintunnelfieldeffecttransistorsbasedongatestructureengineering
_version_ 1725764685290012672

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