Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM)

Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM)

We investigate the effect of Cu concentration On-state resistance retention characteristics of W/Cu/Ti/HfO2/Pt memory cell. The development of RRAM device for application depends on the understanding of the failure mechanism and the key parameters for device optimization. In this study, we develop a...

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Bibliographic Details
Main Authors: Fekadu Gochole Aga, Jiyong Woo, Sangheon Lee, Jeonghwan Song, Jaesung Park, Jaehyuk Park, Seokjae Lim, Changhyuck Sung, Hyunsang Hwang
Format: Article
Language:English
Published: AIP Publishing LLC 2016-02-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4941752

Internet

http://dx.doi.org/10.1063/1.4941752

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