Short-Term Memory Dynamics of TiN/Ti/TiO<sub>2</sub>/SiO<i><sub>x</sub></i>/Si Resistive Random Access Memory

In this study, we investigated the synaptic functions of TiN/Ti/TiO<sub>2</sub>/SiO<i><sub>x</sub></i>/Si resistive random access memory for a neuromorphic computing system that can act as a substitute for the von-Neumann computing architecture. To process the dat...

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Bibliographic Details
Main Authors: Hyojong Cho, Sungjun Kim
Format: Article
Language:English
Published: MDPI AG 2020-09-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/10/9/1821