Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

The concept and simulated device characteristics of tunneling field-effect transistors (TFETs) based on III-nitride heterojunctions are presented for the first time. Through polarization engineering, interband tunneling can become significant in III-nitride heterojunctions, leading to the potential...

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Bibliographic Details
Main Authors: Wenjun Li, Saima Sharmin, Hesameddin Ilatikhameneh, Rajib Rahman, Yeqing Lu, Jingshan Wang, Xiaodong Yan, Alan Seabaugh, Gerhard Klimeck, Debdeep Jena, Patrick Fay
Format: Article
Language:English
Published: IEEE 2015-01-01
Series:IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Subjects:
III-nitride heterojunction
InN
polarization engineering
tunnel field-effect transistors (TFETs)
Online Access:https://ieeexplore.ieee.org/document/7094229/

Internet

https://ieeexplore.ieee.org/document/7094229/

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