Investigation of <inline-formula> <tex-math notation="LaTeX">$I-V$ </tex-math></inline-formula> Linearity in TaO<sub>x</sub>-Based RRAM Devices for Neuromorphic Applications
We perform experiments and device simulations to investigate the origin of current-voltage (I-V) linearity of TaO<sub>X</sub>-based resistive switching memory (RRAM) devices for their possible application as electronic synapses. By using electrical characterization and simulations, we li...
Main Authors: | Changhyuck Sung, Andrea Padovani, Bastien Beltrando, Donguk Lee, Myunghoon Kwak, Seokjae Lim, Luca Larcher, Vincenzo Della Marca, Hyunsang Hwang |
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Format: | Article |
Language: | English |
Published: |
IEEE
2019-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/8658233/ |
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