Investigation of <inline-formula> <tex-math notation="LaTeX">$I-V$ </tex-math></inline-formula> Linearity in TaO<sub>x</sub>-Based RRAM Devices for Neuromorphic Applications

Investigation of <inline-formula> <tex-math notation="LaTeX">$I-V$ </tex-math></inline-formula> Linearity in TaO<sub>x</sub>-Based RRAM Devices for Neuromorphic Applications

We perform experiments and device simulations to investigate the origin of current-voltage (I-V) linearity of TaO<sub>X</sub>-based resistive switching memory (RRAM) devices for their possible application as electronic synapses. By using electrical characterization and simulations, we li...

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Bibliographic Details
Main Authors: Changhyuck Sung, Andrea Padovani, Bastien Beltrando, Donguk Lee, Myunghoon Kwak, Seokjae Lim, Luca Larcher, Vincenzo Della Marca, Hyunsang Hwang
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">I–V</italic> linearity
neuromorphic system
resistive switching memory (RRAM)
TaOₓ
Online Access:https://ieeexplore.ieee.org/document/8658233/

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https://ieeexplore.ieee.org/document/8658233/

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