Role of Activation Energy in Resistance Drift of Amorphous Phase Change Materials

Role of Activation Energy in Resistance Drift of Amorphous Phase Change Materials

The time evolution of the resistance of amorphous thin films of the phase change materials Ge2Sb2Te5, GeTe and AgIn-Sb2Te is measured during annealing at T=80°C. The annealing process is interrupted by several fast temperature dips to determine the changing temperature dependence of the resistance....

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Bibliographic Details
Main Authors: Martin eWimmer, Matthias eKaes, Christian eDellen, Martin eSalinga
Format: Article
Language:English
Published: Frontiers Media S.A. 2014-12-01
Series:Frontiers in Physics
Subjects:
phase change materials
chalcogenides
GeTe
amorphous semiconductors
resistance drift
Resistive memories
Online Access:http://journal.frontiersin.org/Journal/10.3389/fphy.2014.00075/full

Internet

http://journal.frontiersin.org/Journal/10.3389/fphy.2014.00075/full

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