Elicitation of Scattering Parameters of Dual-halo Dual-dielectric Triple-material Surrounding Gate (DH-DD-TM-SG) MOSFET for Microwave Frequency Applications

Elicitation of Scattering Parameters of Dual-halo Dual-dielectric Triple-material Surrounding Gate (DH-DD-TM-SG) MOSFET for Microwave Frequency Applications

This paper presents an analytical model for intrinsic short-circuit admittance (Y) parameters of DH-DD-TM-SG MOSFET. Y parameters have been modeled using different small-signal equivalent circuit parameter which is used to find the Scattering parameters. These Y parameters have further been employed...

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Bibliographic Details
Main Authors: Neeraj Gupta, Prashant Kumar
Format: Article
Language:English
Published: VSB-Technical University of Ostrava 2021-01-01
Series:Advances in Electrical and Electronic Engineering
Subjects:
admittance parameter
cut-off frequency
halo implantation
scattering parameter
triple material.
Online Access:http://advances.utc.sk/index.php/AEEE/article/view/3788

Internet

http://advances.utc.sk/index.php/AEEE/article/view/3788

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