GaAs Triac-like Triangular Barrier Switch Prepared by Molecular Beam Epitaxy
A new S-shaped negative differential resistance (NDR) switching device, prepared by molecular beam epitaxy (MBE), has been successfully developed in a GaAs double triangular barrier structure. Symmetrical bidirectional S-shaped NDR characteristics are observed experimentally. The bidirectional curre...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2001-01-01
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| Series: | Active and Passive Electronic Components |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1155/2001/29392 |