Effect of Oxide Layer in Metal-Oxide-Semiconductor Systems
In this work, we investigate the electrical properties of oxide layer in the metal-oxide semiconductor field effect transistor (MOSFET). The thickness of oxide layer is proportional to square root of oxidation time. The feature of oxide layer thickness on the growth time is consistent with the Deal-...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2016-01-01
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| Series: | MATEC Web of Conferences |
| Online Access: | http://dx.doi.org/10.1051/matecconf/20166706103 |