Experimental study silicon low-dimensional structures for generation of THz radiation

Experimental study silicon low-dimensional structures for generation of THz radiation

Capabilities of precision technologies for manufacturing on SOI wafers of silicon low-dimensional structures for terahertz generation are investigated. The design of diode device based on array of silicon nanowires or on ultrathin (<10 nm) silicon layer are proposed. This generating silicon diode...

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Main Authors: Miakonkikh Andrey, Rogozhin Alexander, Solyankin Petr, Rudenko Konstantin
Format: Article
Language:English
Published: EDP Sciences 2019-01-01
Series:ITM Web of Conferences
Online Access:https://www.itm-conferences.org/articles/itmconf/pdf/2019/07/itmconf_crimico2019_08012.pdf
id doaj-6f14a1dffba64203b397451643eb7cbc
record_format Article
spelling doaj-6f14a1dffba64203b397451643eb7cbc2021-04-02T11:55:41ZengEDP SciencesITM Web of Conferences2271-20972019-01-01300801210.1051/itmconf/20193008012itmconf_crimico2019_08012Experimental study silicon low-dimensional structures for generation of THz radiationMiakonkikh Andrey0Rogozhin Alexander1Solyankin Petr2Rudenko Konstantin3Valiev Institute for Physics and Technology RASValiev Institute for Physics and Technology RASM.V. Lomonosov Moscow State UniversityValiev Institute for Physics and Technology RASCapabilities of precision technologies for manufacturing on SOI wafers of silicon low-dimensional structures for terahertz generation are investigated. The design of diode device based on array of silicon nanowires or on ultrathin (<10 nm) silicon layer are proposed. This generating silicon diode includes nano-sized elements with ballistic transport of carriers, which is coupled to a metal antenna made from silicide layer.https://www.itm-conferences.org/articles/itmconf/pdf/2019/07/itmconf_crimico2019_08012.pdf
collection DOAJ
language English
format Article
sources DOAJ
author Miakonkikh Andrey
Rogozhin Alexander
Solyankin Petr
Rudenko Konstantin
spellingShingle Miakonkikh Andrey
Rogozhin Alexander
Solyankin Petr
Rudenko Konstantin
Experimental study silicon low-dimensional structures for generation of THz radiation
ITM Web of Conferences
author_facet Miakonkikh Andrey
Rogozhin Alexander
Solyankin Petr
Rudenko Konstantin
author_sort Miakonkikh Andrey
title Experimental study silicon low-dimensional structures for generation of THz radiation
title_short Experimental study silicon low-dimensional structures for generation of THz radiation
title_full Experimental study silicon low-dimensional structures for generation of THz radiation
title_fullStr Experimental study silicon low-dimensional structures for generation of THz radiation
title_full_unstemmed Experimental study silicon low-dimensional structures for generation of THz radiation
title_sort experimental study silicon low-dimensional structures for generation of thz radiation
publisher EDP Sciences
series ITM Web of Conferences
issn 2271-2097
publishDate 2019-01-01
description Capabilities of precision technologies for manufacturing on SOI wafers of silicon low-dimensional structures for terahertz generation are investigated. The design of diode device based on array of silicon nanowires or on ultrathin (<10 nm) silicon layer are proposed. This generating silicon diode includes nano-sized elements with ballistic transport of carriers, which is coupled to a metal antenna made from silicide layer.
url https://www.itm-conferences.org/articles/itmconf/pdf/2019/07/itmconf_crimico2019_08012.pdf
work_keys_str_mv AT miakonkikhandrey experimentalstudysiliconlowdimensionalstructuresforgenerationofthzradiation
AT rogozhinalexander experimentalstudysiliconlowdimensionalstructuresforgenerationofthzradiation
AT solyankinpetr experimentalstudysiliconlowdimensionalstructuresforgenerationofthzradiation
AT rudenkokonstantin experimentalstudysiliconlowdimensionalstructuresforgenerationofthzradiation
_version_ 1721570779215167488

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