Experimental study silicon low-dimensional structures for generation of THz radiation

Capabilities of precision technologies for manufacturing on SOI wafers of silicon low-dimensional structures for terahertz generation are investigated. The design of diode device based on array of silicon nanowires or on ultrathin (<10 nm) silicon layer are proposed. This generating silicon diode...

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Bibliographic Details
Main Authors: Miakonkikh Andrey, Rogozhin Alexander, Solyankin Petr, Rudenko Konstantin
Format: Article
Language:English
Published: EDP Sciences 2019-01-01
Series:ITM Web of Conferences
Online Access:https://www.itm-conferences.org/articles/itmconf/pdf/2019/07/itmconf_crimico2019_08012.pdf