Unexpected Selectivity of UV Light Activated Metal-Oxide-Semiconductor Gas Sensors by Two Different Redox Processes
The conflict between the two existing models was resolved, to provide a clear explanation for the unexpected “selectivity” found in UV light activated metal-oxide-semiconductor (MOS) gas sensors during the detection of reducing agents. A new model based on the dynamic equilibrium of adsorbed oxygen...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2016-01-01
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| Series: | Journal of Sensors |
| Online Access: | http://dx.doi.org/10.1155/2016/4306154 |