Synthesis, Characterization and Fabrication of Graphene/Boron Nitride Nanosheets Heterostructure Tunneling Devices

Synthesis, Characterization and Fabrication of Graphene/Boron Nitride Nanosheets Heterostructure Tunneling Devices

Various types of 2D/2D prototype devices based on graphene (G) and boron nitride nanosheets (BNNS) were fabricated to study the charge tunneling phenomenon pertinent to vertical transistors for digital and high frequency electronics. Specifically, G/BNNS/metal, G/SiO<sub>2</sub>, and G/B...

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Bibliographic Details
Main Authors: Muhammad Sajjad, Vladimir Makarov, Frank Mendoza, Muhammad S. Sultan, Ali Aldalbahi, Peter X. Feng, Wojciech M. Jadwisienczak, Brad R. Weiner, Gerardo Morell
Format: Article
Language:English
Published: MDPI AG 2019-06-01
Series:Nanomaterials
Subjects:
graphene
boron nitride nanosheets
heterostructures
tunneling device
2D materials
Online Access:https://www.mdpi.com/2079-4991/9/7/925

Internet

https://www.mdpi.com/2079-4991/9/7/925

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