Response of Graphene Based Gated Nanodevices Exposed to THz Radiation
In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2015-01-01
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| Series: | EPJ Web of Conferences |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1051/epjconf/201510310003 |