Stabilization of ferroelectric HfxZr1−xO2 films using a millisecond flash lamp annealing technique

Stabilization of ferroelectric HfxZr1−xO2 films using a millisecond flash lamp annealing technique

We report on the stabilization of ferroelectric HfxZr1−xO2 (HZO) films crystallized using a low thermal budget millisecond flash lamp annealing technique. Utilizing a 120 s 375 °C preheat step combined with millisecond flash lamp pulses, ferroelectric characteristics can be obtained which are compar...

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Main Authors: Éamon O’Connor, Mattia Halter, Felix Eltes, Marilyne Sousa, Andrew Kellock, Stefan Abel, Jean Fompeyrine
Format: Article
Language:English
Published: AIP Publishing LLC 2018-12-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.5060676
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spelling doaj-6a50c46bb9a14970a958dd502886222c2020-11-24T21:52:50ZengAIP Publishing LLCAPL Materials2166-532X2018-12-01612121103121103-710.1063/1.5060676006812APMStabilization of ferroelectric HfxZr1−xO2 films using a millisecond flash lamp annealing techniqueÉamon O’Connor0Mattia Halter1Felix Eltes2Marilyne Sousa3Andrew Kellock4Stefan Abel5Jean Fompeyrine6IBM Research GmbH—Zurich Research Laboratory, Säumerstrasse 4, CH-8803 Rüschlikon, SwitzerlandIBM Research GmbH—Zurich Research Laboratory, Säumerstrasse 4, CH-8803 Rüschlikon, SwitzerlandIBM Research GmbH—Zurich Research Laboratory, Säumerstrasse 4, CH-8803 Rüschlikon, SwitzerlandIBM Research GmbH—Zurich Research Laboratory, Säumerstrasse 4, CH-8803 Rüschlikon, SwitzerlandIBM Almaden Research Center, 650 Harry Rd., San Jose, California 95120, USAIBM Research GmbH—Zurich Research Laboratory, Säumerstrasse 4, CH-8803 Rüschlikon, SwitzerlandIBM Research GmbH—Zurich Research Laboratory, Säumerstrasse 4, CH-8803 Rüschlikon, SwitzerlandWe report on the stabilization of ferroelectric HfxZr1−xO2 (HZO) films crystallized using a low thermal budget millisecond flash lamp annealing technique. Utilizing a 120 s 375 °C preheat step combined with millisecond flash lamp pulses, ferroelectric characteristics can be obtained which are comparable to that achieved using a 300 s 650 °C rapid thermal anneal. X-ray diffraction, capacitance voltage, and polarization hysteresis analysis consistently point to the formation of the ferroelectric phase of HZO. A remanent polarization (Pr) of ∼21 μC/cm2 and a coercive field (Ec) of ∼1.1 MV/cm are achieved in 10 nm thick HZO layers. Such a technique promises a new alternative solution for low thermal budget formation of ferroelectric HZO films.http://dx.doi.org/10.1063/1.5060676
collection DOAJ
language English
format Article
sources DOAJ
author Éamon O’Connor
Mattia Halter
Felix Eltes
Marilyne Sousa
Andrew Kellock
Stefan Abel
Jean Fompeyrine
spellingShingle Éamon O’Connor
Mattia Halter
Felix Eltes
Marilyne Sousa
Andrew Kellock
Stefan Abel
Jean Fompeyrine
Stabilization of ferroelectric HfxZr1−xO2 films using a millisecond flash lamp annealing technique
APL Materials
author_facet Éamon O’Connor
Mattia Halter
Felix Eltes
Marilyne Sousa
Andrew Kellock
Stefan Abel
Jean Fompeyrine
author_sort Éamon O’Connor
title Stabilization of ferroelectric HfxZr1−xO2 films using a millisecond flash lamp annealing technique
title_short Stabilization of ferroelectric HfxZr1−xO2 films using a millisecond flash lamp annealing technique
title_full Stabilization of ferroelectric HfxZr1−xO2 films using a millisecond flash lamp annealing technique
title_fullStr Stabilization of ferroelectric HfxZr1−xO2 films using a millisecond flash lamp annealing technique
title_full_unstemmed Stabilization of ferroelectric HfxZr1−xO2 films using a millisecond flash lamp annealing technique
title_sort stabilization of ferroelectric hfxzr1−xo2 films using a millisecond flash lamp annealing technique
publisher AIP Publishing LLC
series APL Materials
issn 2166-532X
publishDate 2018-12-01
description We report on the stabilization of ferroelectric HfxZr1−xO2 (HZO) films crystallized using a low thermal budget millisecond flash lamp annealing technique. Utilizing a 120 s 375 °C preheat step combined with millisecond flash lamp pulses, ferroelectric characteristics can be obtained which are comparable to that achieved using a 300 s 650 °C rapid thermal anneal. X-ray diffraction, capacitance voltage, and polarization hysteresis analysis consistently point to the formation of the ferroelectric phase of HZO. A remanent polarization (Pr) of ∼21 μC/cm2 and a coercive field (Ec) of ∼1.1 MV/cm are achieved in 10 nm thick HZO layers. Such a technique promises a new alternative solution for low thermal budget formation of ferroelectric HZO films.
url http://dx.doi.org/10.1063/1.5060676
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