Stabilization of ferroelectric HfxZr1−xO2 films using a millisecond flash lamp annealing technique
We report on the stabilization of ferroelectric HfxZr1−xO2 (HZO) films crystallized using a low thermal budget millisecond flash lamp annealing technique. Utilizing a 120 s 375 °C preheat step combined with millisecond flash lamp pulses, ferroelectric characteristics can be obtained which are compar...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-12-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5060676 |