A Fabrication Process for Emerging Nanoelectronic Devices Based on Oxide Tunnel Junctions
We present a versatile nanodamascene process for the realization of low-power nanoelectronic devices with different oxide junctions. With this process we have fabricated metal/insulator/metal junctions, metallic single electron transistors, silicon tunnel field effect transistors, and planar resisti...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2017-01-01
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| Series: | Journal of Nanomaterials |
| Online Access: | http://dx.doi.org/10.1155/2017/8613571 |