Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

Abstract This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hol...

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Bibliographic Details
Main Authors: Zi-Hui Zhang, Sung-Wen Huang Chen, Chunshuang Chu, Kangkai Tian, Mengqian Fang, Yonghui Zhang, Wengang Bi, Hao-Chung Kuo
Format: Article
Language:English
Published: SpringerOpen 2018-04-01
Series:Nanoscale Research Letters
Subjects:
DUV LED
Superlattice p-EBL
Hole injection
Electron leakage
Efficiency-droop-free
Online Access:http://link.springer.com/article/10.1186/s11671-018-2539-9

Internet

http://link.springer.com/article/10.1186/s11671-018-2539-9

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