Novel Computing Method for Short Programming Time and Low Energy Consumption in HfO<sub>2</sub> Based RRAM Arrays

Novel Computing Method for Short Programming Time and Low Energy Consumption in HfO<sub>2</sub> Based RRAM Arrays

This paper proposes a novel technique for reducing programming time and energy consumption in resistive random access memory (RRAM) arrays based on ramped voltage stress (RVS). RVS method is correlated to conventional constant voltage stress method (CVS) using an analytical model validating RVS as a...

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Bibliographic Details
Main Authors: Gilbert Sassine, Carlo Cagli, Jean-Francois Nodin, Gabriel Molas, Etienne Nowak
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Energy consumption
programming time
reliability
resistive random access memory (RRAM)
Online Access:https://ieeexplore.ieee.org/document/8375685/

Internet

https://ieeexplore.ieee.org/document/8375685/

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