A 3-dimensional calculation of the field emission current and emission angle of a vacuum transistor as a function of gate voltage and radius of curvature of the emitter
We have calculated the electrical characteristics of a vacuum transistor withsharp, pointed emitter and collector with a radius of curvature R<20nm with the aim of revealing the advantages of such emitters. For such surfaces the traditional Fowler-Nordheim theory which pertains to a parallel plat...
Main Authors: | , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2019-10-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5123280 |