A 3-dimensional calculation of the field emission current and emission angle of a vacuum transistor as a function of gate voltage and radius of curvature of the emitter

We have calculated the electrical characteristics of a vacuum transistor withsharp, pointed emitter and collector with a radius of curvature R<20nm with the aim of revealing the advantages of such emitters. For such surfaces the traditional Fowler-Nordheim theory which pertains to a parallel plat...

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Bibliographic Details
Main Authors: M. S. Tsagarakis, J. P. Xanthakis
Format: Article
Language:English
Published: AIP Publishing LLC 2019-10-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5123280