Impact of Radiation Effect on Ferroelectric Al-Doped HfO<sub>2</sub> Metal-Ferroelectric- Insulator-Semiconductor Structure

Impact of Radiation Effect on Ferroelectric Al-Doped HfO<sub>2</sub> Metal-Ferroelectric- Insulator-Semiconductor Structure

The &#x03B3;-ray total dose radiation effects on ferroelectric Al-doped HfO<sub>2</sub> (HfAlO) thin films with an n-type Si substrate were studied. The I-V, P-V, C-V and fatigue characteristics of the HfAlO-based Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure were anal...

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Bibliographic Details
Main Authors: Wanli Zhang, Guangzhao Wang, Minghua Tang, Lian Cui, Teng Wang, Pengyu Su, Zhuojun Chen, Xiaojiang Long, Yongguang Xiao, Shaoan Yan
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
Metal-ferroelectric-insulator-semiconductor (MFIS)
Hafnium Aluminium Oxide (HfAlO)
remnant polarization
γ-ray radiation
ferroelectric memory
Online Access:https://ieeexplore.ieee.org/document/9110854/

Internet

https://ieeexplore.ieee.org/document/9110854/

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