Ion-Enhanced Etching Characteristics of sp<sup>2</sup>-Rich Hydrogenated Amorphous Carbons in CF<sub>4</sub> Plasmas and O<sub>2</sub> Plasmas

Ion-Enhanced Etching Characteristics of sp<sup>2</sup>-Rich Hydrogenated Amorphous Carbons in CF<sub>4</sub> Plasmas and O<sub>2</sub> Plasmas

The sp<sup>2</sup>-rich hydrogenated amorphous carbon (a-C:H) is widely adopted as hard masks in semiconductor-device fabrication processes. The ion-enhanced etch characteristics of sp<sup>2</sup>-rich a-C:H films on ion density and ion energy were investigated in CF<sub&g...

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Bibliographic Details
Main Authors: Jie Li, Yongjae Kim, Seunghun Han, Heeyeop Chae
Format: Article
Language:English
Published: MDPI AG 2021-05-01
Series:Materials
Subjects:
sp<sup>2</sup>-rich hydrogenated amorphous carbon
ion-enhanced etching
CF<sub>4</sub> and O<sub>2</sub> plasma etching
Online Access:https://www.mdpi.com/1996-1944/14/11/2941

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https://www.mdpi.com/1996-1944/14/11/2941

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