The influence and protection of negative current in Latch-up test
Described the generation theory of negative voltage and negative current in Latch-up test and the theory of chain reaction caused by inner parasitic bipolar transistor. Then analyzed the influence of negative current in chip level with examples of analog voltage buffer and LDO. Finally, proposed a s...
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| Format: | Article |
| Language: | zho |
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National Computer System Engineering Research Institute of China
2018-05-01
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| Series: | Dianzi Jishu Yingyong |
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| Online Access: | http://www.chinaaet.com/article/3000082172 |
| Summary: | Described the generation theory of negative voltage and negative current in Latch-up test and the theory of chain reaction caused by inner parasitic bipolar transistor. Then analyzed the influence of negative current in chip level with examples of analog voltage buffer and LDO. Finally, proposed a series of action list of how to protect negative current in chip level. |
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| ISSN: | 0258-7998 |