The influence and protection of negative current in Latch-up test

Described the generation theory of negative voltage and negative current in Latch-up test and the theory of chain reaction caused by inner parasitic bipolar transistor. Then analyzed the influence of negative current in chip level with examples of analog voltage buffer and LDO. Finally, proposed a s...

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Bibliographic Details
Main Author: Sun Junyue
Format: Article
Language:zho
Published: National Computer System Engineering Research Institute of China 2018-05-01
Series:Dianzi Jishu Yingyong
Subjects:
LDO
Online Access:http://www.chinaaet.com/article/3000082172