Effects of Interface Trap on Transient Negative Capacitance Effect: Phase Field Model
Ferroelectric materials have received significant attention as next-generation materials for gates in transistors because of their negative differential capacitance. Emerging transistors, such as the negative capacitance field effect transistor (NCFET) and ferroelectric field-effect transistor (FeFE...
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| Format: | Article |
| Language: | English |
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MDPI AG
2020-12-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/9/12/2141 |