Characterization and physical modeling of MOS capacitors in epitaxial graphene monolayers and bilayers on 6H-SiC
Capacitance voltage (CV) measurements are performed on planar MOS capacitors with an Al2O3 dielectric fabricated in hydrogen intercalated monolayer and bilayer graphene grown on 6H-SiC as a function of frequency and temperature. Quantitative models of the CV data are presented in conjunction with th...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4961361 |