Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction
In photodetectors based on 2D materials, a trade-off often exists between responsivity and speed. Here, the authors attenuate this issue via integration of a lateral, in-plane, electrostatically tunable p-n homojunction with a conventional WSe2 phototransistor.
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2021-06-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-021-23679-8 |